Method of forming ultra-thin SiN film by plasma CVD

Details Method of forming ultra-thin SiN film by plasma CVD Method of forming ultra-thin SiN film by plasma CVD

2007-11-14

2009-12-29

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21293

Reexamination Certificate

active

07638443

ABSTRACT:
A method of forming an ultra-thin SiN film includes: supplying a Si source gas into a reactor in which a substrate is placed on a susceptor; supplying an N source gas into the reactor at a flow rate which is at least 300 times that of the Si source gas; applying an RF power between an upper electrode and the susceptor in the reactor; and depositing an ultra-thin SiN film on the substrate.

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patent: 2001/0052618 (2001-12-01), Hasegawa
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patent: 2002-009169 (2002-01-01), None
patent: 2003-188276 (2003-07-01), None
patent: 2003-258257 (2003-09-01), None

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