Magneto-resistive effect element and magnetic memory

Details Magneto-resistive effect element and magnetic memory Magneto-resistive effect element and magnetic memory

2007-09-27

2009-06-16

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S422000

Reexamination Certificate

active

07547934

ABSTRACT:
It is possible to obtain excellent heat stability even though the element is miniaturized and keep stable magnetic domains even though switching is repeated any number of times. A magneto-resistive effect element includes: a magnetization-pinned layer including a magnetic film having a spin moment oriented in a direction perpendicular to a film surface thereof and pinned in the direction; a magnetic recording layer having a spin moment oriented in a direction perpendicular to a film surface thereof; a nonmagnetic layer formed between the magnetization-pinned layer and the magnetic recording layer; and an anti-ferromagnetic film formed on at least side surfaces of the magnetization-pinned layer.

REFERENCES:
patent: 5953248 (1999-09-01), Chen et al.
patent: 6833982 (2004-12-01), Jayasekara
patent: 6845038 (2005-01-01), Shukh
patent: 6853580 (2005-02-01), Nishimura
patent: 08-321016 (1996-12-01), None
patent: 11-213650 (1999-08-01), None
patent: 2000076843 (2000-03-01), None
patent: 2000-307170 (2000-11-01), None
patent: 2001-273760 (2001-10-01), None
patent: 2002-025013 (2002-01-01), None
patent: 2002-074937 (2002-03-01), None
patent: 2002-289946 (2002-10-01), None

Affiliated with

Also associated with

Rating

Magneto-resistive effect element and magnetic memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magneto-resistive effect element and magnetic memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magneto-resistive effect element and magnetic memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4120381