Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-25
2009-06-23
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S018000, C257S048000, C257SE21522
Reexamination Certificate
active
07550382
ABSTRACT:
A semiconductor element formed over the same substrate as a TFT, includes a semiconductor film having an impurity region; an insulating film formed over the semiconductor film; an electrode divided into a plurality of parts over the insulating film by spacing a distance a in a first direction (channel width direction); an insulator with a width b formed to be in contact with a side wall of the electrodes and an insulator formed in a region between the electrodes divided into a plurality of parts; a silicide layer formed over part of the surface of the impurity region; and characteristics of the TFT are evaluated by measuring resistance of the semiconductor film of the semiconductor element.
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First Office Action issued Jan. 9, 2009 in Chinese Patent Application No. 200610088623.4 with English translation (19 pages).
Everhart Caridad M
Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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