Manufacturing method of semiconductor device, evaluation...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S018000, C257S048000, C257SE21522

Reexamination Certificate

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07550382

ABSTRACT:
A semiconductor element formed over the same substrate as a TFT, includes a semiconductor film having an impurity region; an insulating film formed over the semiconductor film; an electrode divided into a plurality of parts over the insulating film by spacing a distance a in a first direction (channel width direction); an insulator with a width b formed to be in contact with a side wall of the electrodes and an insulator formed in a region between the electrodes divided into a plurality of parts; a silicide layer formed over part of the surface of the impurity region; and characteristics of the TFT are evaluated by measuring resistance of the semiconductor film of the semiconductor element.

REFERENCES:
patent: 5576556 (1996-11-01), Takemura et al.
patent: 5962897 (1999-10-01), Takemura et al.
patent: 6455875 (2002-09-01), Takemura et al.
patent: 6559010 (2003-05-01), Kuo et al.
patent: 6790749 (2004-09-01), Takemura et al.
patent: 6887724 (2005-05-01), Nakamura et al.
patent: 6911358 (2005-06-01), Azami et al.
patent: 2001/0009222 (2001-07-01), Mizouchi et al.
patent: 2001/0019129 (2001-09-01), You
patent: 2001/0020987 (2001-09-01), Ahn et al.
patent: 2004/0072411 (2004-04-01), Azami et al.
patent: 2004/0101989 (2004-05-01), Honda
patent: 2005/0017239 (2005-01-01), Nakamura et al.
patent: 2005/0037549 (2005-02-01), Takemura et al.
patent: 2005/0152658 (2005-07-01), Keyser
patent: 2005/0196883 (2005-09-01), Asano et al.
patent: 2005/0253178 (2005-11-01), Yamaguchi et al.
patent: 2005/0273290 (2005-12-01), Asano et al.
patent: 2007/0010057 (2007-01-01), Tang
patent: 10-098199 (1998-04-01), None
First Office Action issued Jan. 9, 2009 in Chinese Patent Application No. 200610088623.4 with English translation (19 pages).

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