Semiconductor device, semiconductor layer and production...

Details Semiconductor device, semiconductor layer and production... Semiconductor device, semiconductor layer and production...

2007-06-27

2009-11-24

Fahmy, Wael (Department: 2814)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257S097000, C257SE21090

Reexamination Certificate

active

07622398

ABSTRACT:
A semiconductor device is prepared by the use of a vapor phase method and is provided with a semiconductor layer composed of boron phosphide (BP) having a band gap at room temperature of not less than 2.8 eV and not more than 3.4 eV or a boron phosphide (BP)-base mixed crystal which contains the boron phosphide (BP) and which is represented by the formula: BαAlβGaγIn1-α-β-γPδAs∈N1-δ-∈(0<α≦1, 0≦β<1, 0≦γ<1, 0<α+β+γ≦1, 0<δ≦1, 0≦∈<1, 0<δ+∈≦1).

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