Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-03-23
2009-06-09
Nguyen, Kiet T (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S398000
Reexamination Certificate
active
07544958
ABSTRACT:
A method includes generating an ion beam having ions at a first charge state, accelerating the ions at the first charge state to a final energy, altering the first charge state to a second charge state for some of said ions, the second charge state less than the first charge state, providing an ion beam having ions at the second charge state and parasitic beamlets having ions at a charge state different than the second charge state, directing the ion beam having ions at the second charge state towards a wafer, and directing the parasitic beamlets away from the wafer. An ion implanter having a charge exchange apparatus is also provided.
REFERENCES:
patent: 5719403 (1998-02-01), Purser
patent: 5945682 (1999-08-01), Oh et al.
patent: 2002/0088944 (2002-07-01), LaFontaine et al.
Nguyen Kiet T
Varian Semiconductor Equipment Associates Inc.
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