Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making named article
Reexamination Certificate
2003-04-17
2009-08-04
Huff, Mark F (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making named article
C430S322000, C430S315000, C430S324000, C430S302000, C430S330000
Reexamination Certificate
active
07569334
ABSTRACT:
In the present invention, the problem of stability deterioration of the obtained conductive pattern substrate at the time of forming a conductive pattern by an additive method when a layer having reactivity remains on the substrate is to be solved. According to pattern exposure with a photo catalyst substrate4having a photo catalyst layer3laminated on a second substrate5superimposed onto a wettability changeable substrate1with a wettability changeable layer3laminated on a first substrate2,a wettability pattern is formed. And furthermore, by adhering a conductive coating solution, or the like, a conductive pattern substrate without containing a photo catalyst can be manufactured.
REFERENCES:
patent: 4594182 (1986-06-01), Hashimoto et al.
patent: 2003/0087073 (2003-05-01), Kobayashi
patent: 2004/0027514 (2004-02-01), Kobayashi et al.
patent: 2000-249821 (2000-09-01), None
patent: 2001-345537 (2001-12-01), None
English translation of JP 2000-249821, “Production of Patten Formed Body”, Kobayashi et al., Sep. 2000.
Kobayashi Hironori
Yamashita Yudai
Dai Nippon Printing Co. Ltd.
Huff Mark F
Ladas & Parry LLP
Sullivan Caleen O
LandOfFree
Method of manufacturing for conductive pattern substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing for conductive pattern substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing for conductive pattern substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4116196