Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2006-11-17

2009-08-25

Deo, Duy-Vu N (Department: 1792)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S620000, C438S621000, C438S622000, C438S624000, C438S626000

Reexamination Certificate

active

07579270

ABSTRACT:
It is an object of the present invention to provide a method for manufacturing a highly reliable semiconductor device with preferable yield. In the invention, two-step etching is performed when selectively removing an interlayer insulating film with at least two layers constituting a semiconductor device, and forming an opening. One feature of the invention is that at least either one of a first gas (a first etching gas) and a second gas (a second etching gas) used at the time of the two-step etching is added with an inert gas.

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