Semiconductor device having SOI substrate

Details Semiconductor device having SOI substrate Semiconductor device having SOI substrate

2006-05-10

2009-06-02

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S390000, C257S401000, C257SE27081

Reexamination Certificate

active

07541649

ABSTRACT:
A semiconductor device includes first semiconductor layers with a first conductivity, second to fifth semiconductor layers with a second conductivity, gate electrodes, and a first wiring layer. The second semiconductor layers are each disposed between adjacent ones of the first semiconductor layers. The third semiconductor layer is in contact with the second semiconductor layers. The gate electrodes are formed on the second semiconductor layers. The fourth semiconductor layer is in contact with the third semiconductor layer. The first wiring layer is formed on the third semiconductor layer and commonly connects the gate electrodes. The length of the fourth semiconductor layer in the lengthwise direction is smaller than the length of the third semiconductor layer in the lengthwise direction. The fifth semiconductor layer is in contact with the fourth semiconductor layer and isolated from the first semiconductor layers by the fourth semiconductor layer.

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