Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2006-12-12
2009-10-20
Lin, Sun J (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000, C716S030000
Reexamination Certificate
active
07607112
ABSTRACT:
A reverse fill pattern is used in an integrated circuit (IC) that comprises a metal layer having slots formed therein in the shape of rhombuses. The distribution of rhombic slots ensures that electrical current is evenly distributed in the conductor, even at the edge regions of the conductor. This even distribution of rhombic slots ensures that electrical current is evenly distributed at least in the central region, and in most if not all cases, across the entire region of the conductor including the edge regions. Thus, the reverse fill pattern prevents current crowding. By preventing current crowding, more stringent metal distribution targets can be met without creating or exacerbating problems associated with IR drop and EM, and without having to add any extra metal to avoid such problems.
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patent: 6687880 (2004-02-01), Rivera et al.
patent: 6867127 (2005-03-01), Hung
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Agere Systems Inc.
Harman John M.
Lin Sun J
Santos Daniel J.
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