Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-20
2009-11-17
Nhu, David (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S200000, C257S760000, C257SE21127, C257SE21182, C257SE21267, C257SE21320
Reexamination Certificate
active
07619283
ABSTRACT:
Methods and apparatus provide for a glass or glass ceramic substrate, including: a bulk layer; an enhanced positive ion concentration layer; and a reduced positive ion concentration layer, wherein the enhanced positive ion concentration layer contains substantially all modifier positive ions from the reduced positive ion concentration layer as a result of migration, the substrate does not include any further material thereon.
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Corning Incorporated
Dernier Matthew B.
Nhu David
Schaeberle Timothy M.
Watson Bruce P.
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