Formation of silicon nitride film

Details Formation of silicon nitride film Formation of silicon nitride film

2006-03-27

2009-12-01

Chen, Bret (Department: 1792)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S255393, C427S255394, C117S088000, C117S092000, C117S103000

Reexamination Certificate

active

07625609

ABSTRACT:
A method of forming a silicon nitride film which can form a silicon nitride film having a high film stress at a low process temperature is described herein. The method includes the steps of (a) supplying dichlorosilane into a reaction chamber containing a process object, thereby allowing chemical species originated from dichlorosilane as a precursor to be adsorbed on the process object; (b) hydrogenating chlorine contained in the chemical species, thereby removing the chlorine from the chemical species; and (c) supplying ammonia radicals into the reaction chamber, thereby nitriding the chemical species, from which the chlorine has been removed, by the ammonia radicals to, deposit resultant silicon nitride on the process object, wherein the steps (a), (b) and (c) are performed repeatedly for plural times in that order, thereby a silicon nitride film of a desired thickness is formed on a semiconductor wafer.

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Chinese Office Action issued on Jul. 11, 2008 with partial English translation.
Korean Office Action issued on Apr. 29, 2009 for Korean Patent Application No. 10-2006-27288 with English translation.

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