Method for forming a conductive layer of material on an integrat

Details Method for forming a conductive layer of material on an integrat Method for forming a conductive layer of material on an integrat

1995-12-18

1996-09-17

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

20419223, 1566431, 118723R, C23C 1400

Patent

active

055565069

ABSTRACT:
In one embodiment a plasma ignitor (10) having a first dielectric housing (18), that encases a first portion of a first conductive lead (14) and a first portion of a second conductive lead (16), and end cap (30), that locks its filament (31) into position, is used to initiate a plasma within an etch chamber (64). The plasma is used to etch an integrated circuit substrate (62) and to form an etched surface (78). A conductive layer of material (80) is then deposited on the etched surface (78). The first dielectric housing (18) keeps the first portion of the first conductive lead (14) and the first portion of the second conductive lead (16) from shorting to one another during processing, and the end cap (30) prevents the filament (31) from falling off during processing. Thus, the present invention allows contact resistance to be repeatably minimized.

REFERENCES:
patent: 4968374 (1990-11-01), Tsukada et al.
patent: 5449432 (1995-09-01), Hanawa
patent: 5468296 (1995-11-01), Patrick et al.

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