Method for fabricating an image sensor mounted by mass reflow

Details Method for fabricating an image sensor mounted by mass reflow Method for fabricating an image sensor mounted by mass reflow

2004-09-30

2009-02-17

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S186000

Reexamination Certificate

active

07491572

ABSTRACT:
A package for semiconductor image pickup device is provided. The package is fabricated by using flip chip bumping. During deposition process of forming a metallic bonding layer and a metal layer for plating, a surface of a semiconductor image pickup device is maintained at the range between room temperature and 200° C. in accordance with a first embodiment. A polymer layer for preventing stress from generating can absorb stress generated during the deposition process in accordance with a second embodiment. According to the present invention, a functional polymer layer on the surface of a semiconductor image pickup device can be prevent from being deteriorated in its properties and from transforming at its surface.

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First Notification of Office Action issued Jul. 25, 2008 corresponding to Chinese Patent Application No. 200480028857.9.

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