Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-07
2009-10-20
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29302, C365S185030
Reexamination Certificate
active
07605421
ABSTRACT:
A non-volatile semiconductor memory element includes: a semiconductor region of a first conductivity type formed in a plate-like form on a semiconductor substrate; a first insulating film formed on a first side face of the semiconductor region; a first charge accumulating layer formed on a face of the first insulating film opposite from the semiconductor region; a second insulating film formed on a second side face of the semiconductor region, and has a different equivalent oxide thickness from the first insulating film; a second charge accumulating layer formed on a face of the second insulating film opposite from the semiconductor region; a third insulating film provided so as to cover the first and second charge accumulating layers; a control gate electrode provided so as to cover the third insulating film; a channel region formed in a portion of the semiconductor region covered with the control gate electrode; and source/drain regions of a second conductivity type formed in portions of the semiconductor region on both sides of the channel region.
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Dickey Thomas L
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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