Electrostatic discharge protection semiconductor structure

Details Electrostatic discharge protection semiconductor structure Electrostatic discharge protection semiconductor structure

2006-06-29

2009-11-10

Lee, Hsien-ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S356000, C257S361000, C257S362000, C257SE29014, C257SE29063

Reexamination Certificate

active

07615826

ABSTRACT:
An electrostatic discharge (ESD) protection device with adjustable single-trigger or multi-trigger voltage is provided. The semiconductor structure has multi-stage protection semiconductor circuit function and adjustable discharge capacity. The single-trigger or multi-trigger semiconductor structure may be fabricated by using the conventional semiconductor process, and can be applied to IC semiconductor design and to effectively protect the important semiconductor devices and to prevent the semiconductor devices from ESD damage. In particular, the present invention can meet the requirements of high power semiconductor device and has better protection function compared to conventional ESD protection circuit. In the present invention, a plurality of N-wells or P-wells connected in parallel are used to adjust the discharge capacity of various wells in the P-substrate so as to improve the ESD protection capability and meet different power standards.

REFERENCES:
patent: 7417287 (2008-08-01), Huang et al.

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