Semiconductor device and method for manufacturing thereof

Details Semiconductor device and method for manufacturing thereof Semiconductor device and method for manufacturing thereof

2007-06-19

2009-12-01

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S311000, C257S347000, C257SE27122, C257SE21320

Reexamination Certificate

active

07625784

ABSTRACT:
The disclosure includes methods of manufacturing a semiconductor device formed on an SOI structure. In one example, a first and second semiconductor layer is formed on a semiconductor substrate including a first region. The first semiconductor layer and the second semiconductor layer are removed from a second region to form a recess for a support. A support precursor layer is formed. A portion of the support precursor layer is removed to form a support coupling the recess and the second semiconductor layer. A part of the first and second semiconductor layer is etched using the support as a mask. The first semiconductor layer is etched and removed to form a cavity under the second semiconductor layer. The second semiconductor layer is thermally oxidized to form a buried insulating layer in the cavity and the support is removed from at least the first region to expose the second semiconductor layer.

REFERENCES:
patent: 7332399 (2008-02-01), Kato
patent: 02-205339 (1990-08-01), None
patent: 2005-354024 (2005-12-01), None
patent: 2006-108206 (2006-04-01), None
patent: 2006-210683 (2006-08-01), None
T. Sakai et al., Separation by Bonding Si Islands (SBSI) for LSI Applications, Second International SiGe Technology and Device Meeting, Meeting Abstract, May 2004, pp. 230-231.

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