Semiconductor device

Details Semiconductor device Semiconductor device

2006-01-18

2009-06-30

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S355000, C257S362000, C257SE27031, C257SE29183

Reexamination Certificate

active

07554160

ABSTRACT:
A semiconductor device has a source region, a channel region and a drain region formed in order along a surface of a substrate, a vertical type bipolar transistor formed from the source region below the substrate, a base contact region of the vertical type bipolar transistor, a buried layer connected to the vertical type bipolar transistor, a buried contact layer which electrically conducts the drain region and the buried layer and a drift region formed between the drain region and the channel region, which has the same conductive type as that of the drain region and has impurity concentration less than that of the drain region.

REFERENCES:
patent: 6605844 (2003-08-01), Nakamura et al.
patent: 6614077 (2003-09-01), Nakamura et al.
patent: 2002/0017697 (2002-02-01), Kitamura et al.
patent: 2003/0197226 (2003-10-01), Chen et al.

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