Ion implanter

Details Ion implanter Ion implanter

2007-10-30

2009-10-20

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S492300, C250S42300F, C250S426000, C250S427000

Reexamination Certificate

active

07605382

ABSTRACT:
The ion implanter has: an ion source which generates an ion beam; electron beam sources which emit an electron beam to be scanned in the Y direction in the ion source; a power source for the sources; an ion beam monitor which, in the vicinity of an implanting position, measures a Y-direction ion beam current density distribution of the ion beam; and a controlling device. The controlling device has a function of homogenizing the Y-direction ion beam current density distribution measured by the monitor, by, while controlling the power sources on the basis of measurement data of the monitor, increasing a scanning speed of the electron beam in a position corresponding to a monitor point where an ion beam current density measured by the monitor is large; and decreasing the scanning speed of the electron beam in a position corresponding to a monitor point where the measured ion beam current density is small.

REFERENCES:
patent: 7491953 (2009-02-01), Horsky et al.
patent: 2006/0097193 (2006-05-01), Horsky et al.
patent: 2009/0090872 (2009-04-01), Horsky et al.
patent: 2000-315473 (2000-11-01), None
patent: 2005-38689 (2005-02-01), None

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