Semiconductor device and method of manufacturing the...

Details Semiconductor device and method of manufacturing the... Semiconductor device and method of manufacturing the...

2007-05-08

2009-10-20

Andújar, Leonardo (Department: 2893)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Reexamination Certificate

active

07605061

ABSTRACT:
An active region in a semiconductor device is made up of a parallel p-n layer including a first p-semiconductor layer and a first n-semiconductor with the widths and total amounts of impurities being equal to each other to provide a structure in which charges are balanced. A section parallel to stripes in the parallel p-n layer in an inactive region is made up of a second parallel p-n layer including a second p-semiconductor layer, with its width larger than that of the first p-semiconductor layer, and a second n-semiconductor layer with its width smaller than that of the first n-semiconductor layer. The total amount of impurities in the second p-semiconductor layer is made larger than that in the second n-semiconductor layer to provide a structure in which charges are made unbalanced.

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Office Action issued in corresponding German Patent Application No. 102005002778.4-33 dated Sep. 15, 2008.

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