Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Reexamination Certificate
2005-10-19
2009-12-29
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
C257S109000, C257S415000, C257SE51040, C977S708000, C200S181000, C333S262000
Reexamination Certificate
active
07638790
ABSTRACT:
An RF nanoswitch which can reduce a loss in RF signal. The RF nanoswitch includes a first electrode unit connected to one terminal of a driving power supply, a second electrode connected to the other terminal of the driving power supply, and a dielectric material selectively coming into contact with at least one of the first electrode unit and the second electrode, depending on whether or not power is applied from the driving power supply.
REFERENCES:
patent: 2002/0175408 (2002-11-01), Majumdar et al.
patent: 2005/0280436 (2005-12-01), Bertin
patent: 2006/0091983 (2006-05-01), Robert
Nam Kuang-woo
Shim Dong-ha
Song In-sang
Yun Seok-chul
Ho Tu-Tu V
Samsung Electronics Co,. Ltd.
Sughrue & Mion, PLLC
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