Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-08-25

2009-10-20

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S774000, C257SE21597, C257SE23067

Reexamination Certificate

active

07605080

ABSTRACT:
In a method of manufacturing a semiconductor device having a through electrode56that connects an electrode pad20of a semiconductor element14,which has a device forming layer18and the electrode pad20on one surface side, and a rewiring pattern52on other surface side of the semiconductor element14,the device forming layer18and the electrode pad20are formed on an upper surface side of the semiconductor element14,a first resist layer62is formed on surfaces of the electrode pad20and the device forming layer18,an opening64is formed in the electrode pad20by the etching, and a through hole54is formed in the semiconductor element14by the etching in a position that is communicated with the opening64.The device forming layer18is protected by the first resist layer62,and also a flip-chip connection can be applied by providing the through electrode56to attain a downsizing.

REFERENCES:
patent: 6620731 (2003-09-01), Farnworth et al.
patent: 6852621 (2005-02-01), Hanaoka et al.
patent: 6873054 (2005-03-01), Miyazawa et al.
patent: 2004/0212086 (2004-10-01), Dotta et al.
patent: 1 439 576 (2004-07-01), None
patent: 2002-373895 (2002-12-01), None
patent: 2002-373957 (2002-12-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4104086