Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-10-13

2009-10-13

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257S059000, C257SE29282, C257SE29151, C257SE29202, C257SE29273, C257SE21413

Reexamination Certificate

active

07601566

ABSTRACT:
It is an object of the present invention to provide a method for preventing a breaking and poor contact, without increasing the number of steps, thereby forming an integrated circuit with high driving performance and reliability. The present invention applies a photo mask or a reticle each of which is provided with a diffraction grating pattern or with an auxiliary pattern formed of a semi-translucent film having a light intensity reducing function to a photolithography step for forming wires in an overlapping portion of wires. And a conductive film to serve as a lower wire of a two-layer structure is formed, and then, a resist pattern is formed so that a first layer of the lower wire and a second layer narrower than the first layer are formed for relieving a steep step.

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Kim.C et al., “A Novel Four-Mask-Count Process Architecture for TFT-LCDS”, SID Digest '00 : SID International Symposium Digest of Technical Papers, 2000, pp. 1006-1009.

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