MgO tunnel barriers and method of formation

Details MgO tunnel barriers and method of formation MgO tunnel barriers and method of formation

2004-10-25

2009-10-06

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C365S158000

Reexamination Certificate

active

07598555

ABSTRACT:
MgO tunnel barriers are formed by depositing a thin layer of Mg on a suitable underlayer, and then directing oxygen and additional Mg towards the Mg layer. The oxygen reacts with the additional Mg and the Mg in the Mg layer to form a MgO tunnel barrier that enjoys excellent tunneling characteristics. The MgO tunnel barriers so formed may be used in magnetic tunnel junctions having tunneling magnetoresistance (TMR) values of greater than 100%. The highest TMR values are observed for junctions that have been annealed and that have a (100) crystallographic orientation.

REFERENCES:
patent: 5390061 (1995-02-01), Nakatani et al.
patent: 5465185 (1995-11-01), Heim et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5729410 (1998-03-01), Fontana, Jr. et al.
patent: 5764567 (1998-06-01), Parkin
patent: 5841692 (1998-11-01), Gallagher et al.
patent: 5862022 (1999-01-01), Noguchi et al.
patent: 5936293 (1999-08-01), Parkin
patent: 6153320 (2000-11-01), Parkin
patent: 6172859 (2001-01-01), Watanabe et al.
patent: 6226160 (2001-05-01), Gallagher et al.
patent: 6249407 (2001-06-01), Aoshima et al.
patent: 6347049 (2002-02-01), Childress et al.
patent: 6359289 (2002-03-01), Parkin
patent: 6388268 (2002-05-01), Kim et al.
patent: 6392281 (2002-05-01), Tsuge
patent: 6429497 (2002-08-01), Nickel
patent: 6535365 (2003-03-01), Lukaszew et al.
patent: 6674617 (2004-01-01), Gill
patent: 6687099 (2004-02-01), Nakatani et al.
patent: 6767655 (2004-07-01), Hiramoto et al.
patent: 6791792 (2004-09-01), Takahashi
patent: 6839206 (2005-01-01), Saito et al.
patent: 6841395 (2005-01-01), Linn et al.
patent: 6963096 (2005-11-01), Schmidt et al.
patent: 7195945 (2007-03-01), Edelstein et al.
patent: 7212385 (2007-05-01), Hayakawa
patent: 7220498 (2007-05-01), Nagahama et al.
patent: 7252852 (2007-08-01), Parkin
patent: 7270896 (2007-09-01), Parkin
patent: 7274080 (2007-09-01), Parkin
patent: 7276384 (2007-10-01), Parkin et al.
patent: 7300711 (2007-11-01), Parkin
patent: 7345855 (2008-03-01), Parkin
patent: 7349187 (2008-03-01), Parkin
patent: 7443639 (2008-10-01), Parkin
patent: 2002/0006020 (2002-01-01), Hasegawa
patent: 2002/0034094 (2002-03-01), Saito et al.
patent: 2002/0076940 (2002-06-01), Hibino
patent: 2002/0097534 (2002-07-01), Sun et al.
patent: 2002/0097535 (2002-07-01), Ito et al.
patent: 2002/0097537 (2002-07-01), Shimazawa
patent: 2002/0114112 (2002-08-01), Nakashio et al.
patent: 2002/0159203 (2002-10-01), Saito et al.
patent: 2002/0163764 (2002-11-01), Nakazawa et al.
patent: 2002/0164828 (2002-11-01), Ishiwata et al.
patent: 2002/0191354 (2002-12-01), Yoshikawa et al.
patent: 2002/0191355 (2002-12-01), Hiramoto et al.
patent: 2003/0008416 (2003-01-01), Shimura et al.
patent: 2003/0035249 (2003-02-01), Ho et al.
patent: 2003/0058685 (2003-03-01), Tran et al.
patent: 2003/0128483 (2003-07-01), Kamijo
patent: 2003/0157373 (2003-08-01), Kirino et al.
patent: 2003/0169542 (2003-09-01), Gill
patent: 2003/0179071 (2003-09-01), Hiramoto et al.
patent: 2004/0144995 (2004-07-01), Nagahama et al.
patent: 2004/0207961 (2004-10-01), Ichimura et al.
patent: 2004/0234815 (2004-11-01), Drewes
patent: 2005/0094327 (2005-05-01), Okuno et al.
patent: 2006/0164759 (2006-07-01), Okada et al.
patent: 2007/0111332 (2007-05-01), Zhao et al.
patent: 2007/0154740 (2007-07-01), Yuasa et al.
patent: 2007/0259213 (2007-11-01), Hashimoto et al.
patent: 2007/0274193 (2007-11-01), Akiyama et al.
patent: 2007/0297218 (2007-12-01), Abraham et al.
patent: 2008/0138660 (2008-06-01), Parkin
patent: 2008/0145952 (2008-06-01), Parkin
patent: 2008/0182015 (2008-07-01), Parkin
patent: 2008/0182342 (2008-07-01), Parkin
patent: 2008/0291584 (2008-11-01), Parkin
patent: 2000 322714 (2000-11-01), None
patent: 02/075344 (2002-09-01), None
patent: 02/099905 (2002-12-01), None
Mitani et al, “Fe/MgO/FeCo(100) epitaxial . . . plasma oxidation”, J.Appl.Phys. vol. 93, No. 10, May 2003, pp. 8041-8043.
Hosotani et al, “Effect of Interface Buffer Layer on the Reliability of Ultra-Thin MgO Magnetic Tunnel Junctions”, IEEE 45th Annual International Reliability oPhysic Symposium, Phoenix, 2007, pp. 650-651.
Faure-Vincent, J., et al, “High Tunnel Magnetoresistance in Epitaxial Fe/MgO/Fe Tunnel Junctions”, App.Phys.Lett. vol. 82, No. 25, Jun. 2003, pp. 4507-4510.
Wulfhekel, W., et al, “Single-crystal Magnetotunnel Junctions”, Appl.Phys.Lett. vol. 78, No. 4, Jan. 2001, pp. 509-511.
M. Julliere, “Tunneling Between Ferromagnetic Films”, Physics Letters, vol. 54A, No. 3, Sep. 8, 1975, pp. 225-226.
R. Meservey et al., “Spin-Polarized Electron Tunneling”, Physics Reports (Review Section of Physics Letters) vol. 238, No. 4, 1994, pp. 173-243.
J. S. Moodera et al., “Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions”, Physical Review Letters, vol. 74, No. 16, Apr. 17, 1995, pp. 3273-3276.
T. Miyazaki et al., “Giant magnetic tunneling effect in Fe/A12O3/Fe junction”, Journal of Magnetism and Magnetic Materials , vol. 139, 1995, pp. L231-L234.
D. J. Keavney et al., “Perpendicular conductance and magnetic coupling in epitaxial Fe/MgO/Fe(100) trilayers”, J. Appl. Phys., vol. 81, No. 2, Jan. 15, 1997, pp. 795-798.
P. K. Wong et al., “High conductance magnetoresistive tunnel junctions with multiply oxidized barrier”, Journal of Applied Physics, vol. 83, No. 11, Jun. 1, 1998, pp. 6697-6699.
E. Y. Tsymbal et al., “Spin-polarized electron tunneling across a disordered insulator”, Physical Review B, vol. 58, No. 1, Jul. 1, 1998-I, pp. 432-437.
S.S.P. Parkin et al., “Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)”, J. of Applied Physics, vol. 85, No. 8 Apr. 15, 1999, pp. 5828-5833.
K. Aoshima et al., “Thermal deterioration mechanism of CoFeB/PdPtMn Spin valves”, J. of Applied Physics, vol. 85, No. 8, Apr. 15, 1999, pp. 5042-5044.
Ph. Mavropoulos et al., “Complex Band Structure and Tunneling through Ferromagnet/Insulator/Ferromagnet Junctions”, Phys. Review Letters, vol. 85, No. 5, Jul. 31, 2000, pp. 1088-1091.
D. J. Monsma et al., “Spin polarization of tunneling current from ferromagnet/A12O3 Interfaces using copper-doped aluminum superconducting films”, Applied Physics Letters, vol. 77, No. 5, Jul. 31, 2000, pp. 720-722.
X.-F. Han et al., “Fabrication of high-magnetoresistance tunnel junctions using Co75Fe25 ferromagnetic electrodes”, Applied Physics Letters, vol. 77, No. 2, Jul. 10, 2000, pp. 283-285.
H. Xi, “Annealing Effect on Exchange Bias in Ni81Fe19/Cr50Mn50 Bilayers”, IEEE Transactions on Magnetics, vol. 36, No. 5, Sep. 2000, pp. 2644-2646.
S. Cardoso et al., “High thermal stability tunnel junctions”, Journal of Applied Physics, vol. 87, No. 9, May 1, 2000, pp. 6058-6060.
S. Cardoso et al., “Spin-tunnel-junction thermal stability and interface interdiffusion above 300 C”, Applied Physics Letters, vol. 76, No. 5, Jan. 31, 2000, pp. 610-612.
M. Takiguchi et al., “Thermal degradation of spin valve multilayers caused by Mn Migration”, Journal of Applied Physics, vol. 87, No. 5, Mar. 1, 2000, pp. 2469-2471.
H.L. Meyerheim et al., “Geometrical and Compositional Structure at Metal-Oxide Interfaces: MgO on Fe(001)”, Physical Review Letters, vol. 87, No. 7, Aug. 13, 2001, pp. 076102-1 through 076102-4.
M. Bowen et al., “Large magnetoresistance in Fe/MgO/FeCo(001) epitaxial tunnel junctions on GaAs(001)”, Applied Physics Letters, vol. 79, No. 11, Sep. 10, 2001, pp. 1655-1657.
W. Wulfhekel et al., “Single-crystal magnetotunnel junctions”, Applied Physics Letters, vol. 78, No. 4, Jan. 22, 2001, pp. 509-511.
W. H. Butler et al., “Spin-dpendent tunneling conductance of Fe/MgO/Fe sandwiches”, Physical Review B, vol. 63, Jan. 8, 2001, pp. 054416-1 through 054416-12.
Y. Kim et al., “

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