Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-19
2009-08-04
Lee, Calvin (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
07569895
ABSTRACT:
A semiconductor device having a bipolar transistor improved with heat dissipation. A semiconductor device having bipolar transistors formed in a plurality of device forming regions electrically isolated from each other by device isolation trenches traversing the semiconductor layer, in which a device isolation trench for each of unit bipolar transistors connected in parallel is removed and the plurality of unit bipolar transistors connected in series are entirely surrounded with one device isolation trench.
REFERENCES:
patent: 5374844 (1994-12-01), Moyer
patent: 2004/0183159 (2004-09-01), Tamaki et al.
patent: 2002-057219 (2000-08-01), None
patent: 2002-299466 (2002-10-01), None
Arai Mitsuri
Nonami Hideaki
Wada Shinichiro
Antonelli, Terry Stout & Kraus, LLP.
Hitachi , Ltd.
Hitachi ULSI Systems Co. Ltd.
Lee Calvin
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