Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-31
2009-11-17
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S079000, C257S309000, C257S401000, C257S440000, C257S445000, C257S461000, C257S529000
Reexamination Certificate
active
07619269
ABSTRACT:
A semiconductor device including a pixel region in which one or more pixels are formed and a DRAM cell region in which one or more DRAM cells for storing output signals from the pixels are formed, characterized in that the layers constituting the pixel region and the DRAM cell region are formed in the same semiconductor process.
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Fujitsu Microelectronics Limited
Westerman Hattori Daniels & Adrian LLP
Wojciechowicz Edward
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