Solid-state imaging device

Details Solid-state imaging device Solid-state imaging device

2007-01-22

2009-11-17

Andújar, Leonardo (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S233000, C257S291000, C257S294000, C257SE27133, C257SE27134

Reexamination Certificate

active

07619267

ABSTRACT:
A solid-state imaging device comprising a plurality of pixels arrayed on a plane, wherein each of the pixels includes a semiconductor substrate and a plurality of photoelectric conversion devices, the plurality of photoelectric conversion devices include at least one on-substrate photoelectric conversion device stacked in an upper portion of the semiconductor substrate and at least one in-substrate photoelectric conversion device provided within the semiconductor substrate in a lower portion of the on-substrate photoelectric conversion device, and the plurality of photoelectric conversion devices have a different photoelectric conversion sensitivity from each other.

REFERENCES:
patent: 4438455 (1984-03-01), Tabei
patent: 5698892 (1997-12-01), Koizumi et al.
patent: 2005/0022856 (2005-02-01), Komatsu et al.
patent: 58-103165 (1983-06-01), None
patent: 2002-83946 (2002-03-01), None
patent: 3405099 (2003-07-01), None
Translation of JP 2002083946 A, of record.

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