Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-08-17

2009-12-15

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S532000

Reexamination Certificate

active

07633107

ABSTRACT:
On forming a ferroelectric capacitor structure, an IrO2film and an IrOxfilm which are constituents of an upper electrode layer are sequentially formed on a capacitor film. By RTA treatment at 600° C. to 750° C., in this case, at 725° C. for about one minute under an O2atmosphere, only a surface layer of the IrOxfilm is oxidized, and a highly oxidized layer which is higher in oxidation degree as compared with the other portion of the IrOxfilm is formed.

REFERENCES:
patent: 2002/0024074 (2002-02-01), Jung et al.
patent: 2002/0117700 (2002-08-01), Fox
patent: 2002324894 (2002-11-01), None
patent: 2003-174095 (2003-06-01), None
Office Action dated Jul. 30, 2007, issued in corresponding Korean application No. 10-2006-0075142.

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