Semiconductor device and method of manufacturing...

Details Semiconductor device and method of manufacturing... Semiconductor device and method of manufacturing...

2006-06-13

2009-10-27

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257SE27112

Reexamination Certificate

active

07608890

ABSTRACT:
A method of manufacturing a semiconductor device includes forming a plurality of Fins including a semiconductor material on an insulation layer; forming gate insulation films on sidewalls of the Fins; forming a gate electrode which extends in a direction of arrangement of the Fins and which is electrically insulated from the Fins, the gate electrode is common in the Fins on the gate insulation film; implanting an impurity into portions of the Fins by using the gate electrode as a mask to form a source-drain diffusion layer, the portions of the Fins extending on both sides of the gate electrodes; and depositing a conductive material on both sides of the Fins to connect the Fins to each other.

REFERENCES:
patent: 6063688 (2000-05-01), Doyle et al.
patent: 6924178 (2005-08-01), Beintner
patent: 7087471 (2006-08-01), Beintner
patent: 7224019 (2007-05-01), Hieda et al.
Choi, Y. K. et al., “A Spacer Patterning Technology for Nanoscale CMOS,” IEEE Transactions on Electron Devices, vol. 49, No. 3, pp. 436-441, (Mar. 2002).

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