Method for manufacturing semiconductor device using spin on glas

Details Method for manufacturing semiconductor device using spin on glas Method for manufacturing semiconductor device using spin on glas

1997-04-11

1999-06-15

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438782, 438238, 438239, 438250, 438761, H01L 2170, H01L 21283

Patent

active

059131500

ABSTRACT:
In a method for manufacturing a semiconductor device, a dummy pattern layer is formed on a layer which is located below an insulating layer on which a spin on glass (SOG) layer is formed. The insulating layer is flattened by etching back the SOG layer. Then, a contact hole is perforated in the insulating layer, the dummy pattern layer and the layer, and a conductive layer is buried in the contact hole.

REFERENCES:
patent: 5182235 (1993-01-01), Eguchi
patent: 5518962 (1996-05-01), Murao

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