Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-08-08
1999-06-15
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438621, 438649, 438655, 438683, H01L 2128
Patent
active
059131390
ABSTRACT:
A first metal silicide film is formed on an exposed silicon region of a substrate on which the silicon region and an insulating region are exposed. A metal film is deposited over the whole surface of the substrate covering the first metal silicide film, the metal film capable of being silicidized. A silicon film is deposited on the surface of the metal film. The silicon film and metal film are patterned to form a lamination pattern of the silicon film and metal film continuously extending from a partial area of the exposed silicon region to a partial area of the insulating region. The lamination pattern is heated to establish a silicidation reaction and form a second metal silicide layer.
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Hashimoto Koichi
Hayashi Hiromi
Fujitsu Limited
Quach T. N.
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