Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-02-24
1999-06-15
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438975, 438149, 438401, H01L 2100, H01L 2184
Patent
active
059131136
ABSTRACT:
A method for fabricating a thin film transistor of a liquid crystal display device comprising the steps of introducing a dopant into an indium tin oxide layer or gate insulating layer with an ion shower doping process, forming an amorphous silicon layer thereon, exposing the amorphous silicon layer with a laser beam to diffuse the dopant into the amorphous layer and activate the dopant. As a result of the laser annealing, an n or p-type ohmic polysilicon layer and an intrinsic polysilicon channel layer can be formed. A gate electrode can also be formed on a gate insulating layer using a gate mask.
REFERENCES:
patent: 4864376 (1989-09-01), Aoki et al.
patent: 5061648 (1991-10-01), Aoki et al.
patent: 5328861 (1994-07-01), Miyakawa
patent: 5523257 (1996-06-01), Yamazaki et al.
patent: 5620910 (1997-04-01), Teramoto
patent: 5753542 (1998-05-01), Yamazaki et al.
patent: 5821259 (1998-10-01), Yamazaki et al.
T. Yukawa et al., "An Ohmic Contact Formation Method for Fabricating a-Si TFT's on Large Size Substrate", Japan Display, pp. 506-509, 1989 No Month.
Bowers Charles
Hawranek Scott J.
LG Electronics Inc.
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