Method of fabricating polycrystalline silicon thin film for...

Details Method of fabricating polycrystalline silicon thin film for... Method of fabricating polycrystalline silicon thin film for...

2006-04-19

2009-12-22

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S166000, C438S798000

Reexamination Certificate

active

07635640

ABSTRACT:
A crystallization method of an amorphous semiconductor layer includes providing an amorphous semiconductor layer having a first thickness, crystallizing the amorphous semiconductor layer in a first direction, partially reducing the crystallized semiconductor layer to a second thickness less than the first thickness and crystallizing the etched semiconductor layer in a second direction.

REFERENCES:
patent: 6326268 (2001-12-01), Park et al.
patent: 6368945 (2002-04-01), Im
patent: 6475872 (2002-11-01), Jung
patent: 6563077 (2003-05-01), Im
patent: 6573163 (2003-06-01), Voutsas et al.
patent: 6746942 (2004-06-01), Sakamoto et al.
patent: 6852626 (2005-02-01), Wada et al.
patent: 6949422 (2005-09-01), Kim
patent: 6979632 (2005-12-01), Ohtani et al.
patent: 7153762 (2006-12-01), Kim
patent: 7557050 (2009-07-01), Chung et al.
patent: 2004/0248345 (2004-12-01), Chang
patent: 2005/0170569 (2005-08-01), Yazaki et al.
patent: 2005/0277236 (2005-12-01), Shimomura et al.
patent: 2006/0063351 (2006-03-01), Jain
patent: 2006/0228908 (2006-10-01), Chung et al.
patent: 2007/0254490 (2007-11-01), Jain
patent: WO 03/052833 (2003-06-01), None

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