Method of epitaxially growing gallium arsenide on silicon

Details Method of epitaxially growing gallium arsenide on silicon Method of epitaxially growing gallium arsenide on silicon

1986-07-14

1987-10-13

Doll, John

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156612, 156613, 156DIG70, 156DIG89, 156DIG113, C30B 2502, C30B 2510, C30B 2518, H01L 21205

Patent

active

046996885

ABSTRACT:
Two-step process of expitaxially growing gallium arsenide on a silicon substrate. A silicon substrate is heated to about 450.degree. C. in a reaction chamber and arsine and triethylgallium are introduced into the chamber. After a thin seed layer of gallium arsenide is grown at a relatively slow rate, the silicon substrate is heated to about 600.degree. C. and a thick buffer layer of gallium arsenide is grown at a relatively fast rate.

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