Transistor structure having interconnect to side of...

Details Transistor structure having interconnect to side of... Transistor structure having interconnect to side of...

2006-01-09

2009-08-25

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000

Reexamination Certificate

active

07579655

ABSTRACT:
A transistor structure is disclosed including at least one transistor including a diffusion and an interconnect electrically connected to a side of the diffusion and a conductor in electrical contact with the interconnect. The low-resistivity local interconnect is advantageous for use with stressed liner films since a conductor can contact the interconnect at a distance from the diffusion, thus allowing electrical contact without having to interrupt the stress liner film where it is most effective. Several embodiments of methods of electrically connecting a diffusion to an interconnect are also disclosed.

REFERENCES:
patent: 5554870 (1996-09-01), Fitch et al.
patent: 5610099 (1997-03-01), Stevens et al.
patent: 6001674 (1999-12-01), Wu
patent: 6015990 (2000-01-01), Hieda et al.
patent: 6191457 (2001-02-01), Prengle et al.
patent: 6580137 (2003-06-01), Parke
patent: 2004/0075148 (2004-04-01), Kumagai et al.
patent: 2006/0240650 (2006-10-01), Orlowski et al.

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