Hetero-crystalline structure and method of making same

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Polycrystalline semiconductor

Reexamination Certificate

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C257S051000, C257S064000, C257SE29003, C977S790000, C977S825000

Reexamination Certificate

active

07608530

ABSTRACT:
A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single crystalline material. The nanostructure is a single crystalline material. The nanostructure is grown on the first layer integral to the crystallite using epitaxial growth.

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