Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2004-07-23
2009-08-25
Lee, Sin J. (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S326000, C430S907000, C430S914000
Reexamination Certificate
active
07579131
ABSTRACT:
A positive resist composition comprising:(A) a fluorine atom-containing resin;(B) a compound generating an acid upon irradiation with an actinic ray; and(C) a non-polymer dissolution inhibitor having a specific structure.
REFERENCES:
patent: 6503686 (2003-01-01), Fryd et al.
patent: 6506535 (2003-01-01), Mizutani et al.
patent: 6815143 (2004-11-01), Watanabe
patent: 2001/0041300 (2001-11-01), Kodama et al.
patent: 2003/0232277 (2003-12-01), Sasaki et al.
patent: 2003/0235781 (2003-12-01), Shida et al.
patent: 2004/0005512 (2004-01-01), Mizutani et al.
patent: 2005/0260519 (2005-11-01), Berger et al.
patent: 1319981 (2003-06-01), None
patent: WO 00/17712 (2000-03-01), None
patent: WO 02/31595 (2002-04-01), None
Chambers et al, “Dissolution Inhibitors for 157 nm Photolithography”, Proceedings of SPIE, vol. 5039 (2003).
Outlook for 157-nm resist design,R.R. Kunz, et al., Lincoln, Massachusetts Institute of Technology, Part of the SPIE Conference on advances in Resist Technology and Processing XVI, Proceedings of SPIE, vol. 3678, (1999).
Design Strategies for 157 nm Single-Layer Photoresists: Lithographic Evaluation of a Poly (α-trifluoromethyl vinyl alcohol) Copolymer, Dirk Schmalijohann, et al.., Department of Materials Science and Engineering, Cornell University, Advances in Resist Technology and Processing XVII, Proceedings of SPIE, vol. 3999, (2000).
New Materials for 157 nm Photoresists: Characterization and Properties,Michael K. Crawford, et al.., Advances in Resist Technology and Processing XVII, Proceedings of SPIE, vol. 3999, (2000).
Polymers for 157 nm Photoresist Applications: A Progress Report, Kyle Patterson, et al. in Advances in Resist Technology and Processing XVII, Proceedings of SPIE, vol. 3999, (2000).
Moitreyee Mukherjee-Roy et al., “Evaluation of Alignment Target Designs for Cu and Low K Dual Damascene Processes” Proc. of SPIE, (2003) vol. 5038, No. 1, pp. 93-102.
European Search Report dated Jan. 10, 2005.
FUJIFILM Corporation
Lee Sin J.
Sughrue & Mion, PLLC
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