Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-09-16
2009-11-17
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000
Reexamination Certificate
active
07619254
ABSTRACT:
The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu).
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Machine Translation of KR 10-2004-0062163.
Machine Translation of KR 10-2000-0040732.
Machine Translation of KR 10-0303141.
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Bae Yang-Ho
Cho Beom-Seok
Jeong Chang-Oh
Lee Je-Hun
Ho Anthony
Innovation Counsel LLP
Parker Kenneth A
Samsung Electronics Co,. Ltd.
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