Thin film transistor, circuit apparatus and liquid crystal...

Details Thin film transistor, circuit apparatus and liquid crystal... Thin film transistor, circuit apparatus and liquid crystal...

2006-09-01

2009-10-27

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257S072000, C257S369000, C257S773000, C257S775000

Reexamination Certificate

active

07608891

ABSTRACT:
A thin film transistor includes a one conductive type semiconductor layer (11); a source region (12) and a drain region (13) which are separately provided in the semiconductor layer; and a gate electrode (14) provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width (Ws) of the junction face between the source region and the channel (16) which is provided between the source region and drain region, is different from the width (Wd) of the junction face between the above channel region and the drain region.

REFERENCES:
patent: 5385865 (1995-01-01), Nieder et al.
patent: 6770936 (2004-08-01), Inoue et al.
patent: 6806498 (2004-10-01), Taketomi et al.
patent: 57-172770 (1982-10-01), None
patent: 62-45070 (1987-02-01), None
patent: 05-048095 (1993-02-01), None
patent: 2000-133807 (2000-05-01), None
The first Official Action issued against the corresponding application in China. (Chinese Language) Feb. 9, 2007.

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