Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-08
2009-10-06
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21689
Reexamination Certificate
active
07598565
ABSTRACT:
It is an object to provide a semiconductor memory device having a highly reliable and small-sized involatile memory by realizing a semiconductor memory element which restrains extreme concentration of an electric field onto a surface of activating layer in a channel region and is very minute. Further, it is an object thereof to provide a highly reliable and small-sized semiconductor memory device. There is fabricated a semiconductor memory element in which a surface of an activating layer is flat and which is very minute by using a crystallizing process of a semiconductor activating layer for adding a metal element onto a substrate having an insulating surface to subject to a heating processing and thereafter carrying out continuous oscillating laser irradiation. By using such a semiconductor memory element, a highly reliable and small-sized involatile memory and a semiconductor memory device having the involatile memory are provided.
REFERENCES:
patent: 3890632 (1975-06-01), Ham et al.
patent: 4334347 (1982-06-01), Goldsmith et al.
patent: 5289027 (1994-02-01), Terrill et al.
patent: 5470762 (1995-11-01), Codama et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5728259 (1998-03-01), Suzawa et al.
patent: 5757030 (1998-05-01), Codama et al.
patent: 5840600 (1998-11-01), Yamazaki et al.
patent: 5888858 (1999-03-01), Yamazaki et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 6180439 (2001-01-01), Yamazaki et al.
patent: 6335716 (2002-01-01), Yamazaki et al.
patent: 6498369 (2002-12-01), Yamazaki et al.
patent: 6509217 (2003-01-01), Reddy
patent: 6528397 (2003-03-01), Taketomi et al.
patent: 6559036 (2003-05-01), Ohtani et al.
patent: 6597014 (2003-07-01), Yamazaki et al.
patent: 6667494 (2003-12-01), Yamazaki et al.
patent: 6670635 (2003-12-01), Yamazaki et al.
patent: 6717179 (2004-04-01), Yamazaki et al.
patent: 6737672 (2004-05-01), Hara et al.
patent: 7115941 (2006-10-01), Kato
patent: 7126156 (2006-10-01), Yamazaki et al.
patent: 2002/0171085 (2002-11-01), Suzawa et al.
patent: 2002/0179964 (2002-12-01), Kato et al.
patent: 2003/0021307 (2003-01-01), Yamazaki
patent: 2003/0035219 (2003-02-01), Tanaka
patent: 2003/0067004 (2003-04-01), Nakazawa et al.
patent: 2003/0075755 (2003-04-01), Yamazaki
patent: 2003/0166315 (2003-09-01), Tanada et al.
patent: 2004/0016958 (2004-01-01), Kato et al.
patent: 2005/0036382 (2005-02-01), Kato
patent: 2007/0034873 (2007-02-01), Yamazaki et al.
patent: 07-130652 (1995-05-01), None
patent: 08-181231 (1996-07-01), None
patent: 11-143379 (1999-05-01), None
A. Hara et al.,Ultra-High Performance Poly-Si TFTs on a Glass by a Stable Scanning CW Laser Lateral Crystallization, AM-LCD '01 Digest of Technical Papers, Jan. 1, 2001, pp. 227-230.
Prenty Mark
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor memory element, semiconductor memory device... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory element, semiconductor memory device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory element, semiconductor memory device... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4096690