Semiconductor memory device and semiconductor device...

Details Semiconductor memory device and semiconductor device... Semiconductor memory device and semiconductor device...

2006-12-01

2009-06-02

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21662, C257SE21680

Reexamination Certificate

active

07541654

ABSTRACT:
In a memory cell array are arranged a plurality of cell units having memory cells and selection gate transistors to select the memory cell. A first selection gate line includes a control gate of the selection gate transistors. A second selection gate line is formed above the first selection gate line. The first selection gate line has a first gate electrode, a first inter-gate insulating film and a second gate electrode superimposed in this order. The first inter-gate insulating film has a first opening portion through which the first gate electrode and the second gate electrode come into contact with each other. A contact material is formed on the first selection gate line, and electrically connects the first selection gate line and the second selection gate line with each other. The contact material is arranged on the first selection gate line on which the first opening portion is not arranged.

REFERENCES:
patent: 5637895 (1997-06-01), Iwata et al.
patent: 7078813 (2006-07-01), Sakuma et al.
patent: 2002/0036317 (2002-03-01), Matsui et al.
patent: 2005/0073001 (2005-04-01), Kamigaichi et al.
patent: 2006/0018181 (2006-01-01), Matsunaga et al.
patent: 2006/0237767 (2006-10-01), Sakuma et al.
patent: 2006/0244013 (2006-11-01), Matsunaga et al.
patent: 2007/0138575 (2007-06-01), Arai et al.
patent: 2000-91546 (2000-03-01), None
U.S. Appl. No. 11/450,355, filed Jul. 12, 2006, Hiroyuki Kutsukake, et al.
U.S. Appl. No. 11/980,561, filed Oct. 31, 2007, Sakuma, et al.
U.S. Appl. No. 12/143,597, filed Jun. 20, 2008, Sakuma, et al.

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