Dynamic RAM storage techniques

Details Dynamic RAM storage techniques Dynamic RAM storage techniques

2007-08-24

2009-10-13

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S063000, C365S187000

Reexamination Certificate

active

07602634

ABSTRACT:
Dynamic RAM (DRAM) cells are provided. Data can be read from a DRAM cell without draining the stored charge stored in the cell. During a read cycle, current flows between a Read Bit line and a supply voltage, and charge is not drained directly from the DRAM storage node. Each DRAM cell has a small number of transistors. The DRAM cell can be used to store configuration data on a programmable integrated circuits (IC). Pass gates are used on programmable ICs to drive signals across the chip. Data stored in DRAM cells is provided directly to the pass gates at the full supply voltage to prevent signal degradation. A p-channel transistor eliminates all N-type junctions from the storage node reducing the collection of particles that may cause soft errors.

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