Method for manufacturing a patterned bottom electrode in a...

Details Method for manufacturing a patterned bottom electrode in a... Method for manufacturing a patterned bottom electrode in a...

2006-05-05

2009-02-17

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C257SE21505

Reexamination Certificate

active

07491569

ABSTRACT:
A method for manufacturing a patterned bottom electrode in a piezoelectric device comprises the steps of providing a basic material and producing a layer structure of a conductive material on the basic material. A protective layer is applied on the layer structure over an area. Thereafter, a planarization layer is applied on the protective layer and on the basic material. A portion of the protective layer is then exposed by patterning the planarization layer. Subsequently, the pattern is planarized by removing the portions of the planarization layer remaining outside the portion such that the protective layer laterally abuts on the planarization layer in a flush manner and forms a planar surface. The protective layer is then removed along with a corresponding part of the planarization layer laterally arranged in a flush manner. This results in the layer structure and the remaining planarization layer forming a planar surface.

REFERENCES:
patent: 5853601 (1998-12-01), Krishaswamy et al.
patent: 6635519 (2003-10-01), Barber et al.
patent: 6794212 (2004-09-01), Lee
patent: 102 00 741 (2003-07-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing a patterned bottom electrode in a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a patterned bottom electrode in a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a patterned bottom electrode in a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4095961