Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-12-29
2009-10-06
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S185240, C365S230030, C365S210120, C365S104000, C365S204000
Reexamination Certificate
active
07599230
ABSTRACT:
A semiconductor memory apparatus includes: a cell region having a plurality of unit cells each of which has a switching MOS transistor for transferring data. A peripheral circuit unit accesses data stored in the unit cell. A threshold voltage control unit controls the threshold voltage of the switching MOS transistor.
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Office Action dated Feb. 6, 2009 for Taiwan Patent Application No. 95148007.
Hynix / Semiconductor Inc.
Kaminski Jeffri A.
Le Thong Q
Venable LLP
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