Magnetic random access memory and write method thereof

Details Magnetic random access memory and write method thereof Magnetic random access memory and write method thereof

2008-02-26

2009-12-08

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C365S158000

Reexamination Certificate

active

07629637

ABSTRACT:
A magnetic random access memory includes first and second bit lines extending in a first direction, the second bit line being adjacent to the first bit line in a second direction, a first magnetoresistive effect element being connected to the first bit line and having a first fixed layer, a first recording layer, and a first nonmagnetic layer, and a second magnetoresistive effect element being adjacent to the first magnetoresistive effect element in the second direction and being connected to the second bit line and having a second fixed layer, a second recording layer, and a second nonmagnetic layer, the first and second recording layers being formed by a same first layer extending in the second direction.

REFERENCES:
patent: 6567299 (2003-05-01), Kunikiyo et al.
patent: 2004/0179393 (2004-09-01), Yoda et al.
patent: 2002-231904 (2002-08-01), None
patent: 2004-47027 (2004-02-01), None
patent: 3738165 (2005-11-01), None

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