Method of etching a semiconductor substrate

Details Method of etching a semiconductor substrate Method of etching a semiconductor substrate

1977-10-20

1979-10-23

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156648, 156657, 156659, 156667, 252 795, H01L 21306

Patent

active

041720059

ABSTRACT:
A method of etching a semiconductor substrate which comprises the steps of selectively mounting an etching mask on the semiconductor substrate and effecting selective etching by an anisotropic etchant comprising an aqueous solution containing 0.1 to 20% by weight of trihydrocarbon-substituted (hydroxyhydrocarbon-substituted) ammonium hydroxide.

REFERENCES:
patent: 3160539 (1964-12-01), Hall et al.
patent: 3728179 (1973-04-01), Davidson et al.
patent: 3738881 (1973-06-01), Erdman et al.
patent: 3765969 (1973-10-01), Kragness
IBM Technical Disclosure Bulletin, vol. 16, No. 7, Dec. 1973, Process for Etching Silicon by Gaind et al., pp. 2291 and 2292.

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