High voltage semiconductor device and method of manufacture...

Details High voltage semiconductor device and method of manufacture... High voltage semiconductor device and method of manufacture...

2007-10-18

2009-10-13

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S162000, C257S168000, C257SE29027, C257SE29066

Reexamination Certificate

active

07602025

ABSTRACT:
A drift diffusion layer of a low concentration is formed so as to surround a collector buffer layer having a relatively high concentration including a high-concentration collector diffusion layer in a plane structure. Thereby, current crowding in corner portions of the high-concentration collector diffusion layer is suppressed while maintaining a short turnoff time, and the improvement of breakdown voltage at on-time is realized.

REFERENCES:
patent: 5072268 (1991-12-01), Rumennik
patent: 5925900 (1999-07-01), Amaratunga et al.
patent: 6677622 (2004-01-01), Suzuki et al.
patent: 2008/0012043 (2008-01-01), Udrea et al.
patent: 371785 (1990-06-01), None
patent: 8-236754 (1996-09-01), None
patent: 3730383 (2005-10-01), None

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