Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-12-07
2009-06-02
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S079000, C257S086000, C438S022000, C438S027000, C356S511000
Reexamination Certificate
active
07541622
ABSTRACT:
To provide a superluminescent diode capable of emitting high output super luminescent light having a central wavelength within a range of 0.95 μm to 1.2 μm and an undistorted beam cross section, having a long element life. The super luminescent diode is constituted by: an n-type GaAs substrate; an optical waveguide path constituted by an InGaAs active layer that emits light having a central wavelength within a range of 0.95 μm to 1.2 μm, formed on the GaAs substrate; and a window region layer having a greater energy gap and a smaller refractive index than the active layer, constituted by p-type GaAs that lattice matches with the GaAs substrate, provided at a rear emitting facet of the optical waveguide path. The p-type GaAs window region layer has a favorable crystal membrane with the InGaAs active layer that emits light having the central wavelength within the range of 0.95 μm to 1.2 μm, which does not deteriorate.
REFERENCES:
patent: 6080598 (2000-06-01), Kawai
patent: 2006/0007976 (2006-01-01), Watanabe et al.
patent: 2007/0019208 (2007-01-01), Toida et al.
patent: 5-243608 (1993-09-01), None
F. Bugge, et al., “Interdiffusion in Highly Strained InGaAs-QWs for High Power Laser Diode Applications”, J. Crystal Growth, vol. 272, Issues 1-4, pp. 531-537, 2004.
Dang Phuc T
FUJIFILM Corporation
Sughrue & Mion, PLLC
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