Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2004-08-31

2009-02-17

Smith, Matthew (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S778000, C438S786000

Reexamination Certificate

active

07491655

ABSTRACT:
A semiconductor device using a TFT structure with high reliability is realized. As an insulating film used for the TFT, for example, a gate insulating film, a protecting film, an under film, an interlayer insulating film, or the like, a silicon nitride oxide film (SiNXBYOZ) containing boron is formed by a sputtering method. As a result, the internal stress of this film becomes −5×1010dyn/cm2to 5×1010dyn/cm2, preferably −1010dyn/cm2to 1010dyn/cm2, and the film has high thermal conductivity, so that it typically becomes possible to prevent deterioration due to heat generated at the time of an on operation of the TFT.

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