Printed metal mask for UV, e-beam, ion-beam and X-ray...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C977S775000, C977S776000

Reexamination Certificate

active

07615483

ABSTRACT:
A method of forming vias and pillars using printed masks is described. The printed masks are typically made from droplets that include suspended metal nanoparticles. The use of the same metal nanoparticle solution in both the mask formation and the subsequent formation of conducting structures simplifies the fabrication process.

REFERENCES:
patent: 6742884 (2004-06-01), Wong et al.
patent: 2007/0012950 (2007-01-01), Cain et al.
patent: 2008/0278068 (2008-11-01), Huang et al.
U.S. Appl. No. 11/615,229, filed Dec. 22, 2006, Daniel, et al.

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