Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-12-22
2009-11-10
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C977S775000, C977S776000
Reexamination Certificate
active
07615483
ABSTRACT:
A method of forming vias and pillars using printed masks is described. The printed masks are typically made from droplets that include suspended metal nanoparticles. The use of the same metal nanoparticle solution in both the mask formation and the subsequent formation of conducting structures simplifies the fabrication process.
REFERENCES:
patent: 6742884 (2004-06-01), Wong et al.
patent: 2007/0012950 (2007-01-01), Cain et al.
patent: 2008/0278068 (2008-11-01), Huang et al.
U.S. Appl. No. 11/615,229, filed Dec. 22, 2006, Daniel, et al.
Arias Ana C.
Daniel Jurgen H.
Chen Kent
Le Thao P.
Palo Alto Research Center Incorporated
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