Temperature-controlled metallic dry-fill process

Details Temperature-controlled metallic dry-fill process Temperature-controlled metallic dry-fill process

2006-03-24

2009-11-17

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S625000

Reexamination Certificate

active

07618888

ABSTRACT:
A method for performing ionized physical vapor deposition (iPVD) is described, whereby the substrate temperature can be rapidly changed to control a metal deposition process and increase the quality of the metal deposited. In one embodiment, a copper deposition process can be performed.

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